elektronische bauelemente CZD5706 5 a, 80 v npn epitaxial silicon transistor 01-june-2009 rev. a page 1 of 3 1 base 3 emitter collector 2 description the CZD5706 is designed for high current switching application. features ? large current capacitance ? low collector to emitter saturation voltage ? high-speed switching ? high allowable power dissipation marking switching time test circuit absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 80 v collector to emitter voltage v ces 80 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 6 v collector current i c 5 a collector current(pulse) i cp 7.5 a base current i b 1.2 a total power dissipation (t a =25c) p d 0.8 w total power dissipation (t c =25c) p d 15 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c, unless otherwise specified) parameter symbol min. typ. max. unit test condition s collector-base breakdown voltage bv cbo 80 - - v i c =10 a, i e =0 collector-emitter breakdown voltage bv ces 80 - - v i c =100 a, r be =0 collector-emitter breakdown voltage bv ceo 50 - - v i c =1ma, r be = emitter-base breakdown voltage bv ebo 6 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 1 a v cb =40v, i e =0 emitter cut-off current i ebo - - 1 a v eb =4v, i c =0 v ce(sat)1 - - 135 mv i c =1a, i b =50ma collector-emitter saturation voltage v ce(sat)2 - - 240 mv i c =2a, i b =100ma base-emitter voltage, on v be(sat) - - 1.2 v i c =2a, i b =100ma dc current gain h fe 200 - 560 v ce =2v, i c =500ma transition frequency f t - 400 - mhz v ce =10v, i c =500ma output capacitance c ob - 15 - pf v cb =10v, f=1mhz turn-on time t on - 35 - ns see specified test circuit. storage time t stg - 300 - ns see specified test circuit. fall time t f - 20 - ns see specified test circuit. a c d n o p g e f h k j m b millimeter millimeter ref. min. max. ref. min. max. a 6.35 6.80 j 2.30 typ. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 l 0.50 0.70 d 0.40 0.60 m 0.60 1.00 e 6.40 7.35 n 1.40 1.78 f 2.20 3.00 o 0.00 1.27 g 5.4 0 5.8 0 p 0.43 0.58 h 0. 60 1.2 0 d-pack (to-252) 5706 1 date code b c e
elektronische bauelemente CZD5706 5 a, 80 v npn epitaxial silicon transistor 01-june-2009 rev. a page 2 of 3 characteristic curves
elektronische bauelemente CZD5706 5 a, 80 v npn epitaxial silicon transistor 01-june-2009 rev. a page 3 of 3 characteristic curves
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